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t ga26 21 16 - 18 ghz 1 w ga as power a mplifier preliminary datasheet: rev - 1 2 - 30 - 1 4 - 1 of 13 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com applications ? commercial and military radar ? satellite communications product features ? frequency range: 16 - 18 ghz ? psat: 30.5 dbm at pin = 10 dbm ? pae: 28 % at pin = 10 dbm ? small signal gain: 2 6.5 db ? input return loss: > 13 db ? bias: v d = 6 v, i dq = 40 0 ma, v g = - 0.6 v typical ? chip dimensions: 2.0 x 2.5 x 0. 1 mm functional block diagram p ad configuration p ad no. symbol 1 rf in 2 v g 3 v d 1 4 v d 2 5 rf out ordering information part eccn description tga2621 ear99 16 - 18 ghz gaas p a general description triquints tga26 21 is a ku - band power amplifier fabrica ted on triquints tq pht 15 0.15 m gaas phemt process . the tga26 21 operates from 16 to 18 ghz and typically provides 1 w of saturated output power with an efficiency of 28% pae and 26.5 db of small signal gain. the tga26 21 is well suited to support both radar and sate llite communications as a driver or low power amplifier. both rf ports have intergrat ed dc blocking caps a nd are fully matched to 50 ohms allowing for simple system integration. lead - free and rohs compliant evaluation boards are available upon request. 5 4 1 2 3
t ga26 21 16 - 18 ghz 1 w ga as power a mplifier preliminary datasheet: rev - 1 2 - 30 - 1 4 - 2 of 13 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com absolute maximum ratings parameter value drain voltage (v d ) 6 .25 v gate voltage range (v g ) - 2 to 0 v drain current (i d ) 1300 ma gate current (i g ) - 5 to 5 ma power dissipation , 85 c (p diss ) 3.8 w input power , cw, 50 , (p in ) 17 dbm channel temperature (t ch ) 200 c mounting temperature (30 seconds) 32 0 c storage temperature - 55 to 150 c operation of this device outside the parameter ranges given above may cause permanent damage. these are stress ratings only, and functional operation of the device at these conditions is not implied. recommended operating conditions parameter value drain voltage (v d ) 6 v drain current (i d q ) 40 0 m a gate voltage (v g ) - 0.6 v typical temperature (t base ) - 40 to 85 c electrical specifications are measured at specified test conditions. specifications are not guaranteed overall operating conditions. electrical specifications test conditions unless otherwise noted: 25 0 c, v d = 6 v, i d q = 40 0 m a, v g = - 0.6 v typical , cw parameter min typical max units operational frequency range 16 18 ghz small signal gain 2 6.5 db input return loss > 13 db output return loss > 6 db output power ( pin = 10 dbm ) 30.5 dbm power added efficiency ( pin = 10 dbm ) 28 % im3 ( pout/tone = 20 dbm , spacing = 10 mhz) - 25.5 dbc im5 (pout/tone = 20 dbm, spacing = 10 mhz) - 46.5 dbc small signal gain temperature coefficient - 0.03 db/c output power temperature coefficient - 0.02 dbm/ c
t ga26 21 16 - 18 ghz 1 w ga as power a mplifier preliminary datasheet: rev - 1 2 - 30 - 1 4 - 3 of 13 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com thermal and reliability information parameter test conditions value units thermal resistance ( jc ) (1) t base = 85 c, v d = 6 v (cw) i dq = 40 0 ma , p diss = 2.4 w 26 oc/w channel temperature (t ch ) ( without rf ) 147 c median lifetime (t m ) 1. 5 x 10^ 6 hrs thermal resistance ( jc ) (1) t base = 85 c, v d = 6 v (cw) i dq = 400 ma, i d_drive = 617 ma p in = 10 dbm, p out = 30 dbm, freq = 17 ghz, p diss = 2.7 w 26. 1 oc/w channel temperature (t ch ) (under rf drive) 15 0 c median lifetime (t m ) 1.0 x 10^ 6 hrs notes: 1. thermal resistance calculated at back of a 40 mil cumo carrier plate with 1.5 mil of ausn solder for die attach. test conditions: v d = 6 v; failure criteria is 10% reduction in i d_max 1e+03 1e+04 1e+05 1e+06 1e+07 1e+08 1e+09 1e+10 1e+11 1e+12 1e+13 1e+14 1e+15 25 50 75 100 125 150 175 200 median lifetime, t m (hours) channel temperature, t ch ( c) median lifetime vs. channel temperature fet5
t ga26 21 16 - 18 ghz 1 w ga as power a mplifier preliminary datasheet: rev - 1 2 - 30 - 1 4 - 4 of 13 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com typical performance : small signal conditions unless otherwise specified: v d = 6 v, i dq = 40 0 ma, v g = - 0.6 v typical , cw 15 18 21 24 27 30 33 15 16 17 18 19 20 s 21 (db) frequency (ghz) gain vs. frequency vs. temperature - 50 c 25 c 85 c 15 18 21 24 27 30 33 15 16 17 18 19 20 s 21 (db) frequency (ghz) gain vs. frequency vs. drain current 350 ma 400 ma 450 ma temp = 25 c -30 -27 -24 -21 -18 -15 -12 -9 -6 -3 0 15 16 17 18 19 20 s 11 (db) frequency (ghz) input return loss vs. frequency vs. temp. - 50 c 25 c 85 c -30 -27 -24 -21 -18 -15 -12 -9 -6 -3 0 15 16 17 18 19 20 s 22 (db) frequency (ghz) output return loss vs. frequency vs. temp. - 40 c 25 c 85 c -30 -27 -24 -21 -18 -15 -12 -9 -6 -3 0 15 16 17 18 19 20 s 22 (db) frequency (ghz) orl vs. frequency vs. drain current 350 ma 400 ma 450 ma temp = 25 c -30 -27 -24 -21 -18 -15 -12 -9 -6 -3 0 15 16 17 18 19 20 s11 (db) frequency (ghz) irl vs. frequency vs. drain current 350 ma 400 ma 450 ma temp = 25 c
t ga26 21 16 - 18 ghz 1 w ga as power a mplifier preliminary datasheet: rev - 1 2 - 30 - 1 4 - 5 of 13 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com typical performance: large signal conditions unless otherwise specified: v d = 6 v, i dq = 40 0 ma, v g = - 0.6 v typical , cw 15 18 21 24 27 30 33 -10 -5 0 5 10 output power (dbm) input power (dbm) output power vs. input power vs. freq. 16 ghz 17 ghz 18 ghz temp = 25 c 15 18 21 24 27 30 33 -10 -5 0 5 10 output power (dbm) input power (dbm) output power vs. input power vs. temp. 25 c 85 c freq = 17 ghz 15 18 21 24 27 30 33 -10 -5 0 5 10 output power (dbm) input power (dbm) output power vs. input power vs. v d 5.5 v 6.0 v 6.5 v temp = 25 c 25 26 27 28 29 30 31 32 15.0 16.0 17.0 18.0 19.0 p sat (dbm) frequency (ghz) p sat vs. frequency vs. temperature 25 c 85 c p in = 10 dbm 25 26 27 28 29 30 31 32 15.0 16.0 17.0 18.0 19.0 p sat (dbm) frequency (ghz) p sat vs. frequency vs. drain voltage 6.0 v 6.5 v p in = 10 dbm, temp = 25 c 5.5 v 25 26 27 28 29 30 31 32 15.0 16.0 17.0 18.0 19.0 p sat (dbm) frequency (ghz) p sat vs. frequency vs. drain current p in = 10 dbm, temp = 25 c 400 ma 450 ma 350 ma
t ga26 21 16 - 18 ghz 1 w ga as power a mplifier preliminary datasheet: rev - 1 2 - 30 - 1 4 - 6 of 13 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com typical performance: large signal conditions unless otherwise specified: v d = 6 v, i dq = 40 0 ma, v g = - 0.6 v typical , cw 15 18 21 24 27 30 -10 -5 0 5 10 gain (db) input power (dbm) power gain vs. input power vs. frequency 16 ghz 17 ghz 18 ghz temp = 25 c 15 18 21 24 27 30 -10 -5 0 5 10 gain (db) input power (dbm) power gain vs. input power vs. temp. 25 c 85 c freq = 17 ghz 15 18 21 24 27 30 -10 -5 0 5 10 gain (db) input power (dbm) power gain vs. input power vs. v d 5.5 v 6.0 v 6.5 v temp = 25 c 0 3 6 9 12 15 18 21 24 27 30 -10 -5 0 5 10 power added efficiency (%) input power (dbm) pae vs. input power vs. frequency 16 ghz 17 ghz 18 ghz temp = 25 c 0 3 6 9 12 15 18 21 24 27 30 -10 -5 0 5 10 power added efficiency (%) input power (dbm) pae vs. input power vs. temperature 25 c 85 c freq = 17 ghz 0 3 6 9 12 15 18 21 24 27 30 -10 -5 0 5 10 power added efficiency (%) input power (dbm) pae vs. input power vs. v d 5.5 v 6.0 v 6.5 v temp = 25 c
t ga26 21 16 - 18 ghz 1 w ga as power a mplifier preliminary datasheet: rev - 1 2 - 30 - 1 4 - 7 of 13 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com typical performance: large signal conditions unless otherwise specified: v d = 6 v, i dq = 40 0 ma, v g = - 0.6 v typical , cw 350 400 450 500 550 600 650 700 750 -10 -5 0 5 10 drain current (ma) input power (dbm) drain current vs. input power vs. freq. 16 ghz 17 ghz 18 ghz temp = 25 c 350 400 450 500 550 600 650 700 750 15.0 16.0 17.0 18.0 19.0 drain current (ma) frequency (ghz) drain current vs. frequency vs. temperature 25 c 85 c p in = 10 dbm 350 400 450 500 550 600 650 700 750 15.0 16.0 17.0 18.0 19.0 drain current (ma) frequency (ghz) drain current vs. freq. vs. drain voltage p in = 10 dbm, temp = 25 c 6.0 v 6.5 v 5.5 v -2.0 -1.5 -1.0 -0.5 0.0 -10 -5 0 5 10 gate current (ma) input power (dbm) gate current vs. input power vs. freq. 16 ghz 17 ghz 18 ghz temp = 25 c -2.0 -1.5 -1.0 -0.5 0.0 15.0 16.0 17.0 18.0 19.0 gate current (ma) frequency (ghz) gate current vs. frequency vs. temperature 25 c 85 c p in = 10 dbm -2.0 -1.5 -1.0 -0.5 0.0 15.0 16.0 17.0 18.0 19.0 gate current (ma) frequency (ghz) gate current vs. freq. vs. drain voltage p in = 10 dbm, temp = 25 c 6.0 v 6.5 v 5.5 v
t ga26 21 16 - 18 ghz 1 w ga as power a mplifier preliminary datasheet: rev - 1 2 - 30 - 1 4 - 8 of 13 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com typical performance: l inearity conditions unless otherwise specified: v d = 6 v, i dq = 40 0 ma, v g = - 0.6 v typical , cw 15 18 21 24 27 30 33 36 15 16 17 18 19 otoi (dbm) frequency (ghz) otoi vs. frequency vs. temperature 25 c 85 c i dq = 450 ma, p out /tone = 20 dbm, 10 mhz tone spacing -30 -27 -24 -21 -18 -15 15 16 17 18 19 im 3 (dbc) frequency (ghz) im 3 vs. frequency vs. temperature 25 c 85 c i dq = 450 ma, p out /tone = 20 dbm, 10 mhz tone spacing -75 -69 -63 -57 -51 -45 -39 -33 -27 15 16 17 18 19 20 21 22 23 im5 (dbc) p out /tone (dbm) im5 vs. p out /tone vs. frequency temp = 25 c, 10 mhz tone spacing 17 ghz 19 ghz 15 ghz -39 -36 -33 -30 -27 -24 -21 -18 -15 15 16 17 18 19 20 21 22 23 im3 (dbc) p out /tone (dbm) im3 vs. p out /tone vs. frequency temp = 25 c, 10 mhz tone spacing 17 ghz 19 ghz 15 ghz -51 -48 -45 -42 -39 -36 -33 -30 15 16 17 18 19 im5 (dbc) frequency (ghz) im5 vs. frequency vs. temperature 25 c 85 c i dq = 450 ma, p out /tone = 20 dbm, 10 mhz tone spacing
t ga26 21 16 - 18 ghz 1 w ga as power a mplifier preliminary datasheet: rev - 1 2 - 30 - 1 4 - 9 of 13 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com application information bias - up procedure 1. set i d limit to 1 a, i g limit to 4 ma 2. apply - 2 v to v g for pinch off 3. apply 6 v to v d 4. adjust v g more positive until i dq = 400 ma (v g ~ - 0.6 v typical) 5. apply rf signal bias - down procedure 1. turn off rf signal 2. reduce v g to - 2 v. ensure i dq ~ 0ma 3. set v d to 0v 4. turn off v d supply 5. turn off v g supply v g v d2 rf in rf out c1 1 nf c3 1 nf c2 1 nf c4 0.01 uf v d1 r1 5.1 ohm c6 10 uf v d r2 5.1 ohm c5 10 uf
t ga26 21 16 - 18 ghz 1 w ga as power a mplifier preliminary datasheet: rev - 1 2 - 30 - 1 4 - 10 of 13 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com assembly drawing bill of material reference des. value description manuf. part number c1, c2 , c3 1 nf capacitor, 50 v, slc various c4 0. 0 1 f capacitor, 0402 , 50 v, mlcc various c5 1 0 f capacitor, 0805, 50 v, mlcc various c6 10 f capacitor, 0805, 25 v, mlcc various r1, r2 5 .1 ohms resistor, 0402 , smd various c1 1 nf c3 1 nf c4 0.01 f v d v g rf out rf in c2 1 nf r2 5.1 ohms c5 10 f r1 5.1 ohms c6 10 f
t ga26 21 16 - 18 ghz 1 w ga as power a mplifier preliminary datasheet: rev - 1 2 - 30 - 1 4 - 11 of 13 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com mechanical information units: millimeters thickness: 0.10 die x,y size tolerance : 0.05 0 ground is backside of die rf i n and rf out pads are symmetric pad description p ad no. symbol description pad size 1 rf in input; matched to 50 ; dc blocked 0.1 x 0.2 mm 2 v g gate voltage; bias network is required; see recommended application information above. 0.1 x 0.1 mm 3,4 v d1 (1) drain voltage; bias network is required; see recommended application information above. 0.1 x 0.1 mm 5 v d2 (1) drain voltage; bias netwo rk is required; see recommended application information above. 0.2 x 0.1 mm 6 rf out output; matched to 50 ; dc blocked 0.1 x 0.2 mm notes: 1. pads 3,4, & 5 may be tied together off - chip.
t ga26 21 16 - 18 ghz 1 w ga as power a mplifier preliminary datasheet: rev - 1 2 - 30 - 1 4 - 12 of 13 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com assembly notes component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment (i.e. epoxy) can be used in low - power application s. ? curing should be done in a convection oven; proper exhaust is a safety concern. solder attachment reflow process assembly notes: ? use ausn (80/20) solder and limit exposure to temperatures above 300c to 3 to 4 minutes, maximum. ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? do not use any kind of flux. ? coefficient of thermal expansion matching is critical for long - term reliability. ? devices must be stored in a dry nitrogen atmosphere. organic adhesive attachment assemb ly notes: ? organic adhesives s uch as ablebond 84 - 1, or equivalent, can be used. ? epoxies cure at temperatures of 100 to 200c. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonic s are critical parameters. ? aluminum wire should not be used. ? device s with small pad sizes should be bonded with 0.0007 - inch wire.
t ga26 21 16 - 18 ghz 1 w ga as power a mplifier preliminary datasheet: rev - 1 2 - 30 - 1 4 - 13 of 13 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding the information contained herein. triquint assumes no responsibility or liability whatsoever for any of the information contained herein. triquint assumes no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provided "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the user. all information contained herein is subject to change witho ut notice. customers should obtain and verify the latest relevant information before placing orders for triquint products. the information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent r ights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. triquint products are not warranted or authorized for use as critical components in medical, life - saving , or life - sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. contact information for the latest specifications, additional product information, worldwide sales and distribution locations, and information about triquint : web: www.triquint.com tel: +1. 972 . 994 . 8465 email: info - sales@triquint.com fax: +1. 972 . 994 . 8504 for technical questions and application information: email: info - products@triquint.com product compliance information esd sensitivity ratings caution! esd - sensitive device esd rating: tbd value: tbd test: human body model (hbm) standard: jedec standard jesd22 - a114 solderability use only ausn (80/20) solder and limit exposure to temperatures above 300 c to 3 - 4 minutes, maximum. rohs - compliance this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony free ? tbbp - a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free eccn us department of commerce: ear99

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